Muon probes of temperature-dependent charge carrier kinetics in semiconductors

Author(s)

K Yokoyama, ISIS, STFC Rutherford Appleton Laboratory, Didcot, OX11 0QX, United Kingdom
J S. Lord, ISIS, STFC Rutherford Appleton Laboratory, Didcot, OX11 0QX, United Kingdom
P W. Mengyan, Northern Michigan UniversityFollow
M R. Goeks, Northern Michigan University
R L. Lichti, Texas Tech University, Lubbock, TX 79409-1051

Journal Title/Source

Applied Physics Letters

Publication Date

9-2019

Volume

115

Page Numbers

112101

DOI (if applicable)

https://doi.org/10.1063/1.5115596

Document Type

Journal Article

Department

Physics

Abstract

We have applied the photoexcited muon spin spectroscopy technique to intrinsic germanium with the goal of developing a method for characterizing excess carrier kinetics in a wide range of semiconductors. Muon spin relaxation rates can be a unique measure of excess carrier density and utilized to investigate carrier dynamics. By virtue of the localized nature of implanted muons, the obtained carrier lifetime spectrum can be modeled with a simple 1-dimensional diffusion equation to determine bulk recombination lifetime and carrier diffusivity. Temperature dependent studies of these parameters can reveal the recombination and diffusion mechanism.

Comments

NMU Student funding provided partially by the Freshman Fellows program and the NMU foundation.

Recommended Citation

Muon probes of temperature-dependent charge carrier kinetics in semiconductors. K. Yokoyama, J.S. Lord, P.W. Mengyan, M.R. Goeks and R.L. Lichti Appl Phys Lett 115 (2019) 112101.